Characteristics and analysis of 4H-SiC PiN diodes with a carbon-implanted drift layer  

作　　者：冯江梅 申华军 马晓华 白云 吴佳 李诚瞻 刘可安 刘新宇 

机构地区：[1]School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University [2]Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences [3]Zhuzhou CSR Times Electric Co., Ltd

出　　处：《Journal of Semiconductors》2016年第4期77-81,共5页半导体学报（英文版）

基　　金：Project supported by the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences

摘　　要：The characteristics of 4H-SiC PiN diodes with a carbon-implanted drift layer was investigated and the reason of characteristics improvement was analyzed. The forward voltage drops of the diodes with carbonimplanted drift layer were around 3.3 V, which is lower than that of devices without carbon implantation, the specific-on resistance was decreased from 9.35 to 4.38 mΩcm^2 at 100 A/cm^2, and the reverse leakage current was also decreased. The influence of carbon incorporation in the Si C crystalline grids was studied by using deep-level transient spectroscopy（DLTS）. The DLTS spectra revealed that the Z_（1/2） traps, which were regarded as the main lifetime limiting defects, were dramatically reduced. It is proposed that the reduction of Z_（1/2） traps can achieve longer carrier lifetime in the drift layer, which is beneficial to the performance of bipolar devices.The characteristics of 4H-SiC PiN diodes with a carbon-implanted drift layer was investigated and the reason of characteristics improvement was analyzed. The forward voltage drops of the diodes with carbonimplanted drift layer were around 3.3 V, which is lower than that of devices without carbon implantation, the specific-on resistance was decreased from 9.35 to 4.38 mΩcm^2 at 100 A/cm^2, and the reverse leakage current was also decreased. The influence of carbon incorporation in the Si C crystalline grids was studied by using deep-level transient spectroscopy（DLTS）. The DLTS spectra revealed that the Z_（1/2） traps, which were regarded as the main lifetime limiting defects, were dramatically reduced. It is proposed that the reduction of Z_（1/2） traps can achieve longer carrier lifetime in the drift layer, which is beneficial to the performance of bipolar devices.

关 键 词：4H-SiC carbon-implanted drift layer PiN diodes Z_（1/2） defects 

分 类 号：TN312.4[电子电信—物理电子学]