Thermal analysis in high power GaAs-based laser diodes  

作　　者：龚雪芹 冯士维 岳元 杨军伟 李经纬 

机构地区：[1]School of Electronic Information and Control Engineering, Beijing University of Technology

出　　处：《Journal of Semiconductors》2016年第4期88-92,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61376077,61201046,61204081)

摘　　要：The thermal characteristics of 808 nm Al Ga As/Ga As laser diodes（LDs） are analyzed via electrical transient measurements and infrared thermography. The temperature rise and thermal resistance are measured at various input currents and powers. From the electrical transient measurements, it is found that there is a significant reduction in thermal resistance with increasing power because of the device power conversion efficiency. The component thermal resistance that was obtained from the structure function showed that the total thermal resistance is mainly composed of the thermal resistance of the sub-mount rather than that of the LD chip, and the thermal resistance of the sub-mount decreases with increasing current. The temperature rise values are also measured by infrared thermography and are calibrated based on a reference image, with results that are lower than those determined by electrical transient measurements. The difference in the results is caused by the limited spatial resolution of the measurements and by the signal being captured from the facet rather than from the junction of the laser diode.The thermal characteristics of 808 nm Al Ga As/Ga As laser diodes（LDs） are analyzed via electrical transient measurements and infrared thermography. The temperature rise and thermal resistance are measured at various input currents and powers. From the electrical transient measurements, it is found that there is a significant reduction in thermal resistance with increasing power because of the device power conversion efficiency. The component thermal resistance that was obtained from the structure function showed that the total thermal resistance is mainly composed of the thermal resistance of the sub-mount rather than that of the LD chip, and the thermal resistance of the sub-mount decreases with increasing current. The temperature rise values are also measured by infrared thermography and are calibrated based on a reference image, with results that are lower than those determined by electrical transient measurements. The difference in the results is caused by the limited spatial resolution of the measurements and by the signal being captured from the facet rather than from the junction of the laser diode.

关 键 词：laser diodes temperature rise thermal resistance electrical transient measurement infrared thermography 

分 类 号：TN31[电子电信—物理电子学]