Design of power balance SRAM for DPA-resistance  

作　　者：周可基 汪鹏君 温亮 

机构地区：[1]Institute of Circuits and Systems,Ningbo University,Ningbo 315211,China [2]State Key Laboratory of ASIC&System,Fudan University,Shanghai 201203,China

出　　处：《Journal of Semiconductors》2016年第4期106-112,共7页半导体学报（英文版）

基　　金：Project supported by the Zhejiang Provincial Natural Science Foundation of China(No.LQ14F040001);the National Natural Science Foundation of China(Nos.61274132,61234002);the K.C.Wong Magna Fund in Ningbo University,China

摘　　要：A power balance static random-access memory（SRAM） for resistance to differential power analysis（DPA） is proposed. In the proposed design, the switch power consumption and short-circuit power consumption are balanced by discharging and pre-charging the key nodes of the output circuit and adding an additional shortcircuit current path. Thus, the power consumption is constant in every read cycle. As a result, the DPA-resistant ability of the SRAM is improved. In 65 nm CMOS technology, the power balance SRAM is fully custom designed with a layout area of 5863.6 μm^2.The post-simulation results show that the normalized energy deviation（NED） and normalized standard deviation（NSD） are 0.099% and 0.04%, respectively. Compared to existing power balance circuits, the power balance ability of the proposed SRAM has improved 53%.A power balance static random-access memory（SRAM） for resistance to differential power analysis（DPA） is proposed. In the proposed design, the switch power consumption and short-circuit power consumption are balanced by discharging and pre-charging the key nodes of the output circuit and adding an additional shortcircuit current path. Thus, the power consumption is constant in every read cycle. As a result, the DPA-resistant ability of the SRAM is improved. In 65 nm CMOS technology, the power balance SRAM is fully custom designed with a layout area of 5863.6 μm^2.The post-simulation results show that the normalized energy deviation（NED） and normalized standard deviation（NSD） are 0.099% and 0.04%, respectively. Compared to existing power balance circuits, the power balance ability of the proposed SRAM has improved 53%.

关 键 词：differential power analysis（DPA） static random access memory（SRAM） power balance information security 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]