Design,analysis and test of high-frequency interconnections in 2.5D package with silicon interposer  

作　　者：任晓黎 庞诚 秦征 平野 姜峰 薛恺 刘海燕 于大全 

机构地区：[1]National Center for Advanced Packaging(NCAP China),Wuxi 214315,China [2]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

出　　处：《Journal of Semiconductors》2016年第4期113-119,共7页半导体学报（英文版）

基　　金：Project supported by the National S&T Major Projects(No.2011ZX02709);the National Natural Science Foundation of China(No.61176098);support from the 100 Talents Program of The Chinese Academy of Sciences

摘　　要：An interposer test vehicle with TSVs（through-silicon vias） and two redistribute layers（RDLs） on the top side for 2.5D integration was fabricated and high-frequency interconnections were designed in the form of coplanar waveguide（CPW） and micro strip line（MSL） structures. The signal transmission structures were modeled and simulated in a 3D EM tool to estimate the S-parameters. The measurements were carried out using the vector network analyzer（VNA）. The simulated results of the transmission lines on the surface of the interposer without TSVs showed good agreement with the simulated results, while the transmission structures with TSVs showed significant offset between simulation and test results. The parameters of the transmission structures were changed,and the results were also presented and discussed in this paper.An interposer test vehicle with TSVs（through-silicon vias） and two redistribute layers（RDLs） on the top side for 2.5D integration was fabricated and high-frequency interconnections were designed in the form of coplanar waveguide（CPW） and micro strip line（MSL） structures. The signal transmission structures were modeled and simulated in a 3D EM tool to estimate the S-parameters. The measurements were carried out using the vector network analyzer（VNA）. The simulated results of the transmission lines on the surface of the interposer without TSVs showed good agreement with the simulated results, while the transmission structures with TSVs showed significant offset between simulation and test results. The parameters of the transmission structures were changed,and the results were also presented and discussed in this paper.

关 键 词：interposer TSV（through-silicon vias） RDL high-frequency simulation test S-parameter 

分 类 号：TN405[电子电信—微电子学与固体电子学]