Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET  

作　　者：张金 刘玉岭 闫辰奇 何彦刚 高宝红 

机构地区：[1]Tianjin Key Laboratory of Electronic Materials and Devices, School of Electronic and Information Engineering, Hebei University of Technology

出　　处：《Journal of Semiconductors》2016年第4期120-124,共5页半导体学报（英文版）

基　　金：Project supported by the Major National Science and Technology Special Projects(No.2009ZX02308);the Natural Science Foundation for the Youth of Hebei Province(Nos.F2012202094,F2015202267);the Outstanding Youth Science and Technology Innovation Fund of Hebei University of Technology(No.2013010)

摘　　要：The replacement metal gate（RMG） defectivity performance control is very challenging in high-k metal gate（HKMG） chemical mechanical polishing（CMP）. In this study, three major defect types, including fall-on particles, micro-scratch and corrosion have been investigated. The research studied the effects of polishing pad,pressure, rotating speed, flow rate and post-CMP cleaning on the three kinds of defect, which finally eliminated the defects and achieved good surface morphology. This study will provide an important reference value for the future research of aluminum metal gate CMP.The replacement metal gate（RMG） defectivity performance control is very challenging in high-k metal gate（HKMG） chemical mechanical polishing（CMP）. In this study, three major defect types, including fall-on particles, micro-scratch and corrosion have been investigated. The research studied the effects of polishing pad,pressure, rotating speed, flow rate and post-CMP cleaning on the three kinds of defect, which finally eliminated the defects and achieved good surface morphology. This study will provide an important reference value for the future research of aluminum metal gate CMP.

关 键 词：chemical mechanical planarization（CMP） high-k metal gate（HKMG） defectivity control surface morphology 

分 类 号：TN305.2[电子电信—物理电子学]