Thermal effect on endurance performance of 3-dimensional RRAM crossbar array  

作　　者：卢年端 孙鹏霄 李泠 刘琦 龙世兵 吕杭炳 刘明 

机构地区：[1]Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China [2]Jiangsu National Synergetic Innovation Center for Advanced Materials,Nanjing 210000,China

出　　处：《Chinese Physics B》2016年第5期253-257,共5页中国物理B（英文版）

基　　金：Project supported by the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,the National High Technology Research and Development Program of China(Grant No.2014AA032901);the National Natural Science Foundation of China(Grant Nos.61574166,61334007,61306117,61322408,61221004,and 61274091);Beijing Training Project for the Leading Talents in S&T,China(Grant No.Z151100000315008);the CAEP Microsystem and THz Science and Technology Foundation,China(Grant No.CAEPMT201504)

摘　　要：Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the3 D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1 R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1 R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation.Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the3 D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1 R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1 R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation.

关 键 词：3-dimensional resistive random access memory（RRAM） thermal effect endurance performance 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]