Effects of Mg doping in the quantum barriers on the efficiency droop of GaN based light emitting diodes  

作　　者：刘扬 杨永春 

机构地区：[1]School of Resource and Environmental Science, Lanzhou University, Lanzhou 730000, China [2]Key Laboratory of West China' s Enviromental Science, Lanzhou 730000, China

出　　处：《Chinese Physics B》2016年第5期405-409,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.41171143)

摘　　要：The effects of Mg doping in the quantum barriers（QBs） on the efficiency droop of GaN based light emitting diodes（LEDs） were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells（QWs）, both may reduce the efficiency droop. However,heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop.The effects of Mg doping in the quantum barriers（QBs） on the efficiency droop of GaN based light emitting diodes（LEDs） were investigated through a duel wavelength method. Barrier Mg doping would lead to the enhanced hole transportation and reduced polarization field in the quantum wells（QWs）, both may reduce the efficiency droop. However,heavy Mg doping in the QBs would strongly deteriorate the crystal quality of the QWs grown after the doped QB. When increasing the injection current, the carriers would escape from the QWs between n-GaN and the doped QB and recombine non-radiatively in the QWs grown after the doped QB, leading to a serious efficiency droop.

关 键 词：light emitting diodes droop Mg doping 

分 类 号：TN312.8[电子电信—物理电子学] TM914.4[电气工程—电力电子与电力传动]