石墨烯/硅光电探测器  

Graphene/silicon photodetectors

作　　者：朱淼[1] 朱宏伟[2] 

机构地区：[1]北京有色金属研究总院,北京100088 [2]清华大学材料学院,北京100084

出　　处：《自然杂志》2016年第2期97-100,共4页Chinese Journal of Nature

摘　　要：光电探测是石墨烯器件未来重要的发展方向之一。在众多类型的石墨烯/半导体异质结光电探测器件中,石墨烯/硅光电探测器由于在可见光范围内拥有极高的光电转换效率,并且可方便地在宏观条件下进行制备和组装,因此拥有良好的应用前景。首先介绍了石墨烯/硅光电探测器的研究背景,其次分析了其工作原理和机制,并结合几种典型的石墨烯/硅光电探测器对其性能进行了探讨,最后对石墨烯/硅光电探测器的发展做了展望。As one of the earliest application of graphene, photodetector is widely considered to be promising in the futt,re during various graphene based devices. Thanks to the high photoelectric conversion efficiency of graphene/Si heterojunction and the convenient assembly technology,graphene/Si photodetectors have attracted more research interests. Herein, we firstly introduce the background of graphene/Si photodetectors and then analyze the mechanisms in details. Based on several typical photodetector structures, the pertbrmances of graphene/Si photodetectors are discussed, and the expectation of graphene/Si photodetector is proposed.

关 键 词：石墨烯 硅 异质结 光电探测 

分 类 号：TN15[电子电信—物理电子学]