利用同步辐射光电子能谱技术研究Pb_(1-x)Sr_xTe薄膜的能带移动及其组成异质结能带带阶  

Band shift of Pb_(1-x)Sr_xTe thin film and its band alignment using synchrotron radiation photoelectron spectroscope

作　　者：蔡春锋[1,2] 彭曼丽[1] 翟继志 毕岗[1] 张兵坡[2] 王淼[2] 吴惠桢[2] 张文华[3] 朱俊发[3] 

机构地区：[1]浙江大学城市学院信息与电气工程学院,浙江杭州310015 [2]浙江大学物理系,浙江杭州310027 [3]中国科技大学国家同步辐射实验室,安徽合肥230029

出　　处：《红外与毫米波学报》2016年第2期214-218,226,共6页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61275108;11374259);浙江省自然科学基金(Z1110057;LY15F050009);浙江省教育厅科研项目(Y201430784);浙江大学城市学院教师科研基金(J-15011)~~

摘　　要：利用同步辐射光电子能谱技术研究了低Sr组分时Pb_(1-x)Sr_xTe薄膜能带的移动规律,并计算了Pb_(1-x)Sr_xTe/Pb Te异质结中导带帯阶所占比率.当不考虑应力时,该异质结界面导带带阶比率Qc=ΔEC/ΔEg=0.71.当考虑应力时,PbTe能带发生L能谷与O能谷的劈裂,其导带带阶比率分别为QLC=0.47和QOC=0.72.Pb_(1-x)Sr_xTe/Pb Te异质结界面具有类型Ⅰ的能带排列结构,这说明Pb_(1-x)Sr_xTe/PbTe型量子阱或量子点对电子与空穴都有较强的限制能力.该异质结能带帯阶的精确测量有利于该类三元系半导体异质结在中红外光电器件的研发和应用中发挥重要作用.The valence band shift in Pb_（1-x）Sr_xTe thin films with different Sr compositions was studied.The ratio of conduction band offset and valence band offset in this heterostructure has been determined.Without considering the strain effect,the conduction band offset ratio is Qc= ΔEc/ ΔEg= 0. 71,and with considering the strain effect,the energy band of Pb Te is degenerated into longitudinal and oblique valleys. The conduction band offset ratio for longitudinal valley is QLC= 0. 47 and for oblique valley is QOC= 0. 72,respectively. Pb_（1-x）Sr_xTe / Pb Te heterostructure has a type Ⅰ alignment at the interface,which implies the confinement of both electrons and holes. The accurate determination of band alignment of Pb_（1-x）Sr_xTe / Pb Te heterostructure has great benefits in the research and development of mid-infrared opto-electronic devices.

关 键 词：同步辐射光电子能谱 PbTe/Pb1-xSrxTe异质结 能带带阶 

分 类 号：Q47[生物学—生理学]