高功率微波源中强场击穿机理探讨  

Preliminary Studies of Intense Field Breakdown Mechanism in High Power Microwave Source

作　　者：宋志敏[1,2] 孙钧[1,2] 曹亦兵[1,2] 张余川[1,2] 

机构地区：[1]西北核技术研究所,西安710024 [2]高功率微波技术重点实验室,西安710024

出　　处：《现代应用物理》2016年第1期24-28,共5页Modern Applied Physics

基　　金：国家自然科学基金资助项目(61401367)

摘　　要：为了研究高功率微波源中强场击穿的"阴极"和"阳极"效应,基于无箔二极管,设计了相应的实验方案。实验中,在金属表面最大电场强度约为1.2 MV·cm^(-1)、导引磁场约为2.5T的条件下,通过对上百次脉冲实验后,"阴极"和"阳极"表面形貌的对比分析,发现对于数十纳秒的短脉冲而言,场致爆炸电子发射不会引起明显的结构损伤,在强外加引导磁场约束下,强场致发射电子轰击金属结构表面的"阳极效应"是引起结构破坏的直接原因。In order to investigate＂cathodic ＂and＂anodic＂ mechanisms involving intense RF breakdown in high power microwave（HPM）source,apreliminary experiment is designed based on a foilless diode.An external guiding magnetic field of 2.5Tis used in the experiment,and under the maximal surface field strength over 1.2 MV·cm^-1,by comparing the surface appearances of the cathode and anode after more than 100 shots,we found that the explosive electron emission caused by intense electric field can hardly cause structural damges in duration of several tens of nanoseconds.Under the guidance of a strong external magnetic field,the anodic effect induced by magnetically restricted intense electron bombardment on the metal surface directly causes the structure destruction.

关 键 词：高功率微波 强场击穿 爆炸发射 阳极效应 

分 类 号：TN128[电子电信—物理电子学]