SEM observation and Raman analysis on 6H-SiC wafer damage irradiated by nanosecond pulsed Nd：YAG laser  

作　　者：张志宇 杨旭 长斌智 

机构地区：[1]Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, China [2]Jilin University, Changchun 130025, China

出　　处：《Chinese Optics Letters》2015年第13期74-77,共4页中国光学快报（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China under Grant No. 51305422.

摘　　要：Silicon carbide （SIC） is a wide bandgap semiconductor which exhibits outstanding nlechanical, chemical properties, and potential for a wide range of applications. Laser technology is being established as an indispensable powerful tool to induce structural or nlorphological modifications oil hard brittle materials. SiC （6H-SiC wafer） is irradiated by nanosecond pulsed Nd：YAG laser to evaluate microstructure and mechanical prol）erties of irradiation areas. Raman spectroscopy analysis reveals that irradiations produce homonuclear Si-Si bonds and disordered phase of crystalline SiC. Crystal structure changes are observed as a consequence of laser-induced melting and resolidification. Hardness in the irradiation area exhibits a significant decrease. The formation of silicon fihn facilitates material removal rate, surface electrical conductivity, and ceramics conjunction.Silicon carbide （SIC） is a wide bandgap semiconductor which exhibits outstanding nlechanical, chemical properties, and potential for a wide range of applications. Laser technology is being established as an indispensable powerful tool to induce structural or nlorphological modifications oil hard brittle materials. SiC （6H-SiC wafer） is irradiated by nanosecond pulsed Nd：YAG laser to evaluate microstructure and mechanical prol）erties of irradiation areas. Raman spectroscopy analysis reveals that irradiations produce homonuclear Si-Si bonds and disordered phase of crystalline SiC. Crystal structure changes are observed as a consequence of laser-induced melting and resolidification. Hardness in the irradiation area exhibits a significant decrease. The formation of silicon fihn facilitates material removal rate, surface electrical conductivity, and ceramics conjunction.

分 类 号：TN304.24[电子电信—物理电子学] TQ153[化学工程—电化学工业]