一种D波段平行微带线90°相位反相器  

A Parallel Microstrip Lines 90° Phase Inverter for D-Band Applications

作　　者：陈鹏伟[1] 何进[1] 罗将[1] 王豪[1] 常胜[1] 黄启俊[1] 

机构地区：[1]武汉大学物理科学与技术学院,武汉430072

出　　处：《微电子学》2016年第2期243-246,共4页Microelectronics

基　　金：国家自然科学基金资助项目(61204096;61404094);中央高校基本科研资助项目(2042015kf0174;2042014kf0238);中国博士后科学基金资助项目(2012T50688);湖北省自然科学基金资助项目(2014CFB694);江苏省科学基金资助项目(BK20141218)

摘　　要：基于0.13μm SiGe BiCMOS工艺,设计了一款D波段的并行微带线90°相位反相器,它由一个180°核心反相器和带有两个并列双地槽的平行微带线构成。采用两侧带有并列双地槽的平行微带线结构可以有效地改善该90°反相器的阻抗匹配和能量损耗,从而实现低的插入损耗、回波损耗和相位误差。通过3D建模和电磁场全波分析得到,该90°相位反相器的回波损耗S11的-20dB带宽为116218GHz,基本覆盖了整个D波段,在155GHz工作频率处S11可以达到-65dB;插入损耗S21的-1dB带宽为80220GHz,在155GHz工作频率处S21可以达到-0.47dB;±5°相位误差带宽为150163GHz,在155GHz工作频率处的相位误差为1.15°,非常适合于D波段的应用。A parallel microstrip lines 90° phase inverter for D-band applications was designed in a 0.13μm SiGe BiCMOS process.The 90°phase inverter consisted of an 180°inverter core and parallel microstrip lines along with two parallel ground slots,which could improve significantly the impedance matching and reduce the signal loss,so that the circuit featured low insertion loss,low return loss,low phase error.The full-wave 3D electromagnetic simulation results showed that the-20 dB bandwidth of return loss（S11）was from 116 GHz to 218 GHz,primarily covering D band,and the S11 was -65 dB at the operating frequency of 155 GHz.The -1dB bandwidth of insertion loss（S21）was from 80 GHz to 220 GHz,and the S21 was -0.47 dB at the operating frequency of 155 GHz.The bandwidth of ±5°phase error was from 150 GHz to 163 GHz,and the phase error was 1.15°at the operating frequency of 155 GHz.Therefore,the 90° phase inverter was suitable for the D-band applications.

关 键 词：SIGE BICMOS 90°反相器 低插入损耗 低回波损耗 3D模型 

分 类 号：TN433[电子电信—微电子学与固体电子学]