肖特基型自驱动光电探测器件及其多场耦合性能调控  

Schottky junction based self-powered photodetectors and their performance modulation by multifield coupling effect

作　　者：张铮[1] 廖庆亮[1] 闫小琴[1] 张跃[1,2] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083 [2]北京市新能源材料与技术重点实验室,北京100083

出　　处：《科学通报》2016年第12期1276-1287,共12页Chinese Science Bulletin

基　　金：国家重大科学研究计划(2013CB932602);国家重大科研仪器研制项目(51527802);中国博士后科学基金(2015M580981);中央高校基本科研业务费(FRF-TP-15-075A1;FRF-BR-15-036A)资助

摘　　要：小型化和多功能化是微纳传感器件及其集成系统的主要发展目标.构建无源的自驱动传感器件是实现这一目标的有效途径.利用异质结接触形成的内建电场分离光生电子空穴对从而形成响应电流是实现自驱动光电探测的一种直接有效的方式.在异质结结构的自驱动光电探测器研究中,肖特基型自驱动光电探测器因具有光谱选择性强、响应频率快等特点而备受关注.本文重点介绍了近年来利用低维纳米材料构建的肖特基型自驱动光电探测器,阐释了利用应变/应力、通过界面调控优化器件性能的基本原理,展望了肖特基型自驱动光电探测器发展方向和研究目标.Aiming to overcome the limitation of manufacturing technology at atomic scale, ＂More than Moore＇s law＂ has been recognized as a promising route to develop the next generation micro-nano electronics in the recent years. These new devices have been designed to minimize the non-digital units to nanoscale and to integrate these units into a multifunctional electronic system. The non-digital units usually contain the power source, sensing units, charge transfer devices, switches, amplifier and etc. Low dimensional nanomaterial is considered to be the most promising candidate material to construct nanoscale multifunctional electronic system. Taking the advantages of the low dimensional semiconductor nanomaterials, the self-powered system has been proposed to integrate a power source and a working unit into one system. In a self-powered system, the devices are supplied by the energy directly harvested from environments, such as mechanical energy, solar energy, chemical energy and biological energy. The self-powered system can be used as an individual, sustainable, and wireless nano electronic system. By utilizing the unique interface effect and the superior photoelectrical properties, the self-powered photodetector has been fabricated. The working principle of the self-powered photodetector is to immediately separate the photo generated electron-hole pairs by the built-in field forming at the interface of semiconductor junction area. This type of devices includes pn junction, Schottky junction, and liquid-semiconductor junction. In a Schottky junction device, the response current is usually caused by majority carrier transportation avoiding the interference of the diffusion capacitance caused by minority carriers. As a result, the Schottky junction based self-powered photodetectors have attracted more attentions due to their good spectral selectivity, fast responsivity, and etc. Recently, it has been demonstrated that the piezopotential is an effective way to modify the barrier height of the junctions by applyi

关 键 词：自驱动系统 光电探测器 肖特基结 界面调控 低维纳米材料 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TP212[自动化与计算机技术—检测技术与自动化装置]