Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells  

作　　者：吕海燕 吕元杰 王强 李建飞 冯志红 徐现刚 冀子武 

机构地区：[1]School of Physics, Shandong University, Jinan 250100, China [2]National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China [3]Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China

出　　处：《Chinese Optics Letters》2016年第4期73-77,共5页中国光学快报（英文版）

摘　　要：Temperature-dependent photoluminescence （PL） of phase-separated InGaN quantum wells is investigated over a broader excitation power range. With increasing excitation power from 0.5 pW to 50 mW, the In-rich quasi-quantum dot （QD）-related PL peak disappears at about 3 mW, while temperature behavior of the InGaN matrix-related PL peak energy （linewidth） gradually evolves from a strong ＂S-shaped＂ （＂W-shaped＂） temperature dependence into a weak ＂S-shaped＂ （an approximately ＂V-shaped＂）, until becoming an inverted ＂V-shaped＂ （a monotonically increasing） temperature dependence. This indicates that, with increasing excitation power, the carrier localization effect is gradually reduced and the QD-related transition is submerged by the significantly enhanced InGaN matrix-related transition, while the carrier thermalization effect gradually increases to become predominant at high excitation powers.Temperature-dependent photoluminescence （PL） of phase-separated InGaN quantum wells is investigated over a broader excitation power range. With increasing excitation power from 0.5 pW to 50 mW, the In-rich quasi-quantum dot （QD）-related PL peak disappears at about 3 mW, while temperature behavior of the InGaN matrix-related PL peak energy （linewidth） gradually evolves from a strong ＂S-shaped＂ （＂W-shaped＂） temperature dependence into a weak ＂S-shaped＂ （an approximately ＂V-shaped＂）, until becoming an inverted ＂V-shaped＂ （a monotonically increasing） temperature dependence. This indicates that, with increasing excitation power, the carrier localization effect is gradually reduced and the QD-related transition is submerged by the significantly enhanced InGaN matrix-related transition, while the carrier thermalization effect gradually increases to become predominant at high excitation powers.

关 键 词：PHOTOLUMINESCENCE Quantum efficiency Quantum optics Semiconductor quantum dots Temperature distribution 

分 类 号：O482.31[理学—固体物理]