不同栅压应力下1.8V pMOS热载流子退化机理研究  

Investigation on the Hot-Carrier-Induced Degradation for 1.8V pMOS Under Different Gate Voltage Stresses

作　　者：刘斯扬[1] 于朝辉[1] 张春伟[1] 孙伟锋[1] 苏巍 张爱军 刘玉伟 吴世利 何骁伟 

机构地区：[1]东南大学国家专用集成电路系统工程技术研究中心,江苏南京210096 [2]华润上华半导体有限公司,江苏无锡214000

出　　处：《电子学报》2016年第2期348-352,共5页Acta Electronica Sinica

基　　金：航空科学基金(No.20122469);东南大学无锡分校科研引导资金

摘　　要：本文详细研究了不同栅压应力下1.8V p MOS器件的热载流子退化机理.研究结果表明,随着栅压应力增加,电子注入机制逐渐转化为空穴注入机制,使得p MOS漏极饱和电流(Idsat)、漏极线性电流(Idlin)及阈值电压(Vth)等性能参数退化量逐渐增加,但在Vgs=90%*Vds时,因为没有载流子注入栅氧层,使得退化趋势出现转折.此外,研究还发现,界面态位于耗尽区时对空穴迁移率的影响小于其位于非耗尽区时的影响,致使正向Idsat退化小于反向Idsat退化,然而,正反向Idlin退化却相同,这是因为Idlin状态下器件整个沟道区均处于非耗尽状态.According to the experimental measurement results,combining with the technology computer aided design（ TCAD） simulations,the hot-carrier degradations of 1. 8V p MOS under different gate voltages are investigated in this paper. The results showthat,with the gate voltage increasing,the electron injection mechanism changes to the hole injection mechanism,leading to the increases of the saturation drain current（ Idsat）,linear drain current（ Idlin） and threshold voltage（ Vth）. However,because there is not any carrier injection,the degradation trend begins to change at Vgs= 90% ＊ Vds. Moreover,the study also discovers that the generated interface states have more impact on the hole mobility in the depletion region than that in the non-depletion region. As a result,the degradation of forward Idsatis bigger than the degradation of reverse Idsat. However,the degradations of forward Idlinand reverse Idlinare same since the whole channel is not depleted under Idlin condition.

关 键 词：热载流子 不同栅压应力 正反向退化 

分 类 号：TN386.1[电子电信—物理电子学]