掺硼p型晶硅太阳电池LID恢复研究  

Study on Lid Regenaration in Boron-Doped p-Type Crystalline Silicon Solar Cell

作　　者：陈健生 董方 杨德仁[2] 包大新 赵锋 傅晓敏 

机构地区：[1]横店集团东磁股份有限公司,浙江东阳322118 [2]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《半导体光电》2016年第2期154-160,共7页Semiconductor Optoelectronics

摘　　要：随着p型晶体硅太阳电池转换效率的不断提高,由于光致衰减(LID)造成的效率损失问题也日益突显。文章通过光辐照的方式分别对电池片和经过光衰处理后的电池片进行抑制光衰和光衰恢复处理,前者光衰幅度极大下降,后者光衰得到很好的恢复,并且达到了一个相对稳定的状态,表明光恢复处理可以很好地改善掺硼p型晶体硅太阳电池的LID现象。特别地,针对p型高效电池结构钝化发射区和背表面电池(PERC)技术来说,光恢复处理工艺基本上克服了LID的现象,24h光衰幅度仅为0.03%。LID现象的解决,将为PERC技术的大规模推广奠定基础。As the efficiency of p-type crystalline silicon solar cell getting higher,the efficiency loss caused by LID effect is increasingly serious.Applying the light irradiation,LID of as-made solar cell and degenerated solar cell are both treated with restrain and regeneration of light attenuation.The degradation of as-made solar cell is largely reduced after the regenerated process,and also the efficiency of degenerated solar cell is apparently restored.Moreover,the LID of PERC after 24 his only 0.03%,which holds promising effect in the industrialization of PERC.

关 键 词：p型晶硅 光致衰减 光辐照 光衰恢复 钝化发射区和背表面电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]