P-Type Nitrogen-Doped ZnO Films Prepared by In-Situ Thermal Oxidation of Zn_3N_2 Films  

作　　者：靳玉平 张斌 王建中 施立群 

机构地区：[1]Key Laboratory of Applied Ion Beam Physics(Ministry of Education),Institute of Modern Physics,Fudan University

出　　处：《Chinese Physics Letters》2016年第5期119-122,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 10775033 and 11075038

摘　　要：P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy, x- ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn3N1 films start to transform to ZnO at 400℃ and the total nitrogen content decreases with the increasing annealing temperature. The p-type fihns are achieved at 500℃ with a low resistivity of 6.33Ω.cm and a high hole concentration of ＋8.82 × 10^17 cm-3, as well as a low level of carbon contamination, indicating that the substitutional nitrogen （No） is an effective acceptor in the ZnO：N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy （Vo） defects in the ZnO：N films. The p-type doping mechanism is briefly discussed.P-type nitrogen-doped ZnO films are prepared successfully by in-situ thermal oxidation of Zn3N2 films. The prepared films are characterized by x-ray diffraction, non-Rutherford back.scattering （non-RBS） spectroscopy, x- ray photoelectron spectroscopy, and photoluminescence spectrum. The results show that the Zn3N1 films start to transform to ZnO at 400℃ and the total nitrogen content decreases with the increasing annealing temperature. The p-type fihns are achieved at 500℃ with a low resistivity of 6.33Ω.cm and a high hole concentration of ＋8.82 × 10^17 cm-3, as well as a low level of carbon contamination, indicating that the substitutional nitrogen （No） is an effective acceptor in the ZnO：N film. The photoluminescence spectra show clear UV emissions and also indicate the presence of oxygen vacancy （Vo） defects in the ZnO：N films. The p-type doping mechanism is briefly discussed.

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分 类 号：TN304.21[电子电信—物理电子学] O484.1[理学—固体物理]