硅通孔电镀填充铜的蠕变性能  

Creep Behavior of Electroplated Cu for Through-Silicon Via Filling

作　　者：武伟[1] 秦飞[1] 安彤[1] 陈沛[1] 宇慧平[1] 

机构地区：[1]北京工业大学机械工程与应用电子技术学院,北京100124

出　　处：《北京工业大学学报》2016年第6期837-842,共6页Journal of Beijing University of Technology

基　　金：国家自然科学基金资助项目(11272018)

摘　　要：为了研究TSV-Cu的蠕变性能,首先利用典型的TSV工艺制作了电镀Cu的TSV试样,然后利用纳米压痕法对TSV-Cu进行了压痕蠕变测试.采用恒加载速率/载荷与恒载荷法相结合的方式,对TSV-Cu的蠕变行为进行了研究,测量了TSV-Cu在不同压入应变速率和最大压入深度条件下的蠕变行为.通过对保载阶段的数据进行处理,得到了不同加载条件下的蠕变速率敏感指数m.结果表明:压入应变速率和最大压入深度等加载条件对m的影响不很明显.As through-silicon via （TSV） is the core structural element of 3D integration or packaging,and the performance of TSV-Cu is critical for TSV reliability. This paper studied the creep behavior ofTSV-Cu comprehensively. TSV-Cu sample was prepared by regular TSV process, and then nanoindentionwas used to determine the creep behavior of TSV-Cu at room temperature. A method of combining theconstant loading rate/load test and the constant load test was introduced for the creep behavior testing.Therefore, the creep behaviors of TSV-Cu under various loading conditions were analyzed. The creepstrain rate sensitivity m can also be obtained by processing the data from constant loading stage. Resultsshow that m is independent with indentation strain rates and maximum indentation depths.

关 键 词：硅通孔 TSV-Cu 纳米压痕 蠕变速率敏感指数 

分 类 号：U461[机械工程—车辆工程] TP308[交通运输工程—载运工具运用工程]