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机构地区:[1]大连民族大学物理与材料工程学院,大连116600
出 处:《材料研究学报》2016年第4期277-284,共8页Chinese Journal of Materials Research
基 金:国家自然科学基金项目11405023;辽宁省教育厅一般科研项目L2014539;辽宁省大学生创新创业训练项目S201512026068;大连民族大学"太阳鸟"学生科研项目tyn2015302资助~~
摘 要:利用低能H离子对20 Me V W^(6+)预注入和未注入的钨样品进行辐照实验,考察H离子能量(20-520 e V)和辐照温度(673-1073 K)变化对钨表面微结构的影响。采用非破坏性的导电模式原子力显微镜和扫描电镜分析预注入和未注入钨样品的表面形貌和内表面缺陷分布情况。结果表明,辐照后的样品表面出现大量的纳米尺寸凸起,高能W^(6+)预注入的样品表面损伤要小于未注入的钨样品,意味着高能离子预注入会对材料的表面损伤起到抑制作用,但是当辐照温度高于1073 K时,这种抑制作用开始减弱。Bare and high-energy(20 Me V) W^(6+)pre-implanted polycrystalline tungsten samples were irradiated with low- energy H- ions. The effect of H- ions energy(20- 520 e V) and irradiation temperature(673- 1073 K) on the microstructure evolution of these samples was characterized by means of non- destructive conductive atomic force microscopy and scanning electron microscopy in terms of the surface morphology and distribution of irradiation induced defects. The results show that a large number of nanometer- sized protuberances were formed on the irradiated tungsten samples, but the irradiation induced damage for the pre-implanted ones was slighter than the bare ones. For pre-implanted samples, low-energy H ions irradiation results in a random distribution of nanometer-sized protuberances, indicating that high-energy W^(6+)implantation can release the surface damage of tungsten induced by low-energy H ions to some extent. It also showed that the release effect was decreased when the irradiation temperature was higher than 1073 K.
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