Crystallization Behavior and Properties of B-Doped ZnO Thin Films Prepared by Sol-Gel Method with Different Pyrolysis Temperatures  

热解温度对溶胶-凝胶法制备B掺杂ZnO薄膜晶化行为及性能的影响

作　　者：文斌[1] 刘超前[1] 王楠[1] 王华林[1] 刘世民[1] 姜薇薇[1] 丁万昱[1] 费维栋[2,3] 柴卫平[1] 

机构地区：[1]大连交通大学材料科学与工程学院,大连116028 [2]哈尔滨工业大学材料科学与工程学院,哈尔滨150001 [3]青海大学机械工程学院,西宁810016

出　　处：《Chinese Journal of Chemical Physics》2016年第2期229-233,I0002,共6页化学物理学报（英文）

摘　　要：Boron-doped zinc oxide transparent （BZO） films were prepared by sol-gel method. The effect of pyrolysis temperature on the crystallization behavior and properties was systematically investigated. XRD patterns revealed that the BZO films had wurtzite structure with a preferential growth orientation along the c-axis. With the increase of pyrolysis temperature, the particle size and surface roughness of the BZO films increased, suggesting that pyrolysis temperature is the critical factor for determining the crystallization behavior of the BZO films. Moreover, the carrier concentration and the carrier mobility increased with increasing the pyrolysis temperature, and the mean transmittance for every film is over 90% in the visible range.

关 键 词：Transparent conduction oxide Thin film Boron-doped ZnO Pyrolysis tem-perature SOLGEL 

分 类 号：O[理学]