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作 者:朱清[1] 张哲娟[1] 孙卓[1] 才滨[1] 蔡雯君
机构地区:[1]华东师范大学物理与材料科学学院,纳光电集成与先进装备教育部工程研究中心,上海200062
出 处:《无机化学学报》2016年第5期782-788,共7页Chinese Journal of Inorganic Chemistry
基 金:国家自然科学基金青年基金(No.11204082);上海市科技攻关项目(No.13111102401,12DZ296000);上海闵行区企校合作项目(No.2015MH218)资助
摘 要:以高纯纳米银线作为导电介质,采用低成本丝网印刷法在普通透明玻璃基底上制备纳米银线薄膜层。经低温退火处理后,采用冷场发射扫描电子显微镜对薄膜的形貌进行表征;分别采用紫外可见分光光度计和四探针测试仪对薄膜的光学透过率和导电性能进行测试。实验系统研究了印刷浆料中纳米银线的含量、印刷层数和退火温度对薄膜的光学透过率和导电性能的影响。当印刷浆料中纳米银线的含量为3%(w/w),印刷层数达到3层,经低温275℃退火后,可制备出光电性能良好的纳米银线薄膜,该薄膜最大可见光透过率为39.4%,表面方块电阻仅为25.6Ω·□^(-1)。Silver nanowires with high purity are focused as conductive media to prepare silver nanowires films (AgNWs-Films) on the glass substrate by using low-cost screen printing. After annealed at low temperature, the morphologies of AgNWs-Films films are characterized by field emission scanning electron microscopy. The optic transmittance and conductivity properties of the films are measured by ultraviolet-visible spectrophotometer and four-point probe, respectively. The influences of mass percentages of silver nanowires, the layers of AgNWs-Films and the annealing temperature on the optical and electrical properties are serially studied. It is concluded that within the mass percentages of AgNWs at 3%(w/w) and layers up to 3, the surface square resistence of AgNWs- Films can be as low as 25.6 Ω·□^-1, and the transmittance of films can be 39.4% after annealed at 275℃.
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