一种新型非对称栅隧穿场效应晶体管  

A Novel Asymmetric Gate Tunnel FET

作　　者：王艳福 王红茹 王颖[1] 

机构地区：[1]哈尔滨工程大学信息与通信工程学院,哈尔滨150001

出　　处：《半导体技术》2016年第5期362-365,377,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(51371063);黑龙江省自然科学基金重点项目(ZD201413)

摘　　要：研究了一种新型非对称栅隧穿场效应晶体管(AG-TFET),新型结构结合了隧穿场效应晶体管陡峭的亚阈值摆幅与无结器件较大的开态电流的优点,其总电流大小受控于底部沟道势垒和p+区与本征沟道区形成的反偏p-i隧穿结处的带隙宽度以及电场强度。使用Silvaco TCAD软件对器件性能进行了仿真,并对p+区厚度以及底栅栅介质二氧化铪的长度进行了优化。仿真结果表明:新型AG-TFET具有良好的电学特性,在室温下开关电流比可以达到3.3×1010,开态电流为302μA/μm,陡峭的亚阈值摆幅即点亚阈值摆幅为35 m V/dec,平均亚阈值摆幅为54 m V/dec。因此,该新型AG-TFET有望被应用在未来低功耗电路中。A novel asymmetric gate tunnel field effect transistor（ AG-TFET） was studied. The AGTFET combined advantages of the tunnel FET with the low subthreshold swing and the junctionless field effect transistor（ JLFET） with the high on-state current. The total current was controlled by the potential barrier in the bottom channel as well as the tunnel junction bandgap and the electric field intensity of the reverse-biased p-i tunnel junction between p＋region and intrinsic region. The critical device performances were simulated by Silvaco TCAD simulator,and the parameters were optimized,such as the thickness of p＋region and the length of Hf O2 as the bottom-gate dielectric material. The simulation results of the AG-TFET show excellent characteristics with high ION/ IOFFratio of 3. 3 × 1010 and IONof 302 μA / μm,a steep subthreshold swing,that is,point subthreshold swing of 35 m V / dec and average subthreshold swing of 54 m V / dec at room temperature. Therefore,the AG-TFET is a promising candidate for future low power circuit applications.

关 键 词：非对称栅 无结场效应晶体管(JLFET) 隧穿场效应晶体管(TFET) 亚阈值摆幅 开态电流 

分 类 号：TN386[电子电信—物理电子学]