基于集成无源器件工艺的射频功率分配器设计  

Design of the RF Power Divider Based on the Integrated Passive Device Technology

作　　者：隆万洪 黄文韬 吴振川 徐宽茂 蒋凯旋[1] 

机构地区：[1]中国科学院上海高等研究院,上海201210 [2]中国科学院大学,北京100049 [3]展讯通信有限公司,上海201210

出　　处：《半导体技术》2016年第5期371-377,共7页Semiconductor Technology

摘　　要：由于集成无源器件(IPD)工艺可与集成电路平面工艺兼容,IPD工艺设计的无源器件易集成到集成电路芯片中,有利于电子设备小型化和可靠性的提高。基于IPD工艺,采用等效电路取代14λ传输线的设计方法,分别设计了一个同相和一个反相3 d B射频功率分配器。同相功率分配器的实测结果显示插入损耗约为3.7 d B,隔离度约为25 d B,性能与威尔金森结构功率分配器接近,封装后的尺寸为1.6 mm×0.8 mm,小于威尔金森结构功率分配器。反相功率分配器仿真结果表明插入损耗小于4.2 d B,隔离度约为25 d B。该功率分配器可应用到移动通信终端。The passive device designed with the integrated passive device（ IPD） technology is integrated into IC easily,because the IPD technology is compatible with the IC planar technology,which helps to realize the miniaturization and improve the reliability of the electronic equipment. Based on the IPD technology,an in-phase and an out-of-phase 3 d B power divider were designed respectively by replacing the14λ transmission line with an equivalent circuit. The tests results of the in-phase power divider show that the insert loss is about 3. 7 d B and the isolation is about 25 d B. The performance is close to that of Wilkinson power divider. However,the size of the chip is 1. 6 mm × 0. 8 mm,which is smaller than that of Wilkinson power divider. The simulation results of the out-of-phase power divider show that the insert loss is less than 4. 2 d B and the isolation is about 25 d B. The power divider can be applied to the mobile communication terminal.

关 键 词：功率分配器 集成无源器件(IPD) 1/4λ传输线 等效电路 小尺寸 

分 类 号：TN626[电子电信—电路与系统]