钎焊金刚石薄壁钻钻磨氮化硅陶瓷孔的试验研究  

Research on drill-grinding silicon nitride ceramic with thin-wall brazed diamond drill

作　　者：丁金[1] 董海[1] 白鹤鹏 张野[1] 

机构地区：[1]大连理工大学机械工程学院,大连116024

出　　处：《金刚石与磨料磨具工程》2016年第2期43-48,共6页Diamond & Abrasives Engineering

摘　　要：使用单层钎焊金刚石薄壁钻,进行钻磨氮化硅陶瓷的试验。首先研究氮化硅陶瓷材料的去除机理,主要包括脆性去除和塑性去除,且脆性去除占主要部分。其次研究刀具壁厚、主轴转速和钻压对加工效率的影响。结果表明：三个参数存在的最佳值分别为1.5 mm、710 r/min和613 N；并且壁厚不宜超过2 mm,主轴转速不宜超过900 r/min,钻压应在500~705 N 范围内,钻压低于330 N 时刀具会打滑。Silicon nitride ceramic was drill-ground with single-layer brazed diamond thin-wall drill.Firstly,the removal mechanism of silicon nitride ceramic was studied,which mainly included brittle removal and ductile regime removal,and brittle removal was the main removal mechanism.Secondly,the influence of wall thickness,spindle speed and drilling pressure on the machining efficiency was studied.The results showed that three parameters all had optimal values,namely 1.5 mm,710 r∕min and 613 N respectively.Wall thickness should not exceed 2 mm,the spindle speed no more than 900 r∕min,and the drilling pressure should be within the range of 500 to 705 N.If the drilling pressure was less than 330 N,the cutting tool would slip.

关 键 词：单层钎焊金刚石薄壁钻 氮化硅陶瓷 去除机理 加工效率 

分 类 号：TB321[一般工业技术—材料科学与工程] TG74[金属学及工艺—刀具与模具]