NiO-TiO_2纳米复合薄膜的阻变特性  

Resistance Switching of NiO-TiO_2 Nano-Composite Thin Films

作　　者：李建昌[1] 李润霞[1] 郑辰平 

机构地区：[1]东北大学机械工程与自动化学院,辽宁沈阳110819

出　　处：《东北大学学报（自然科学版）》2016年第5期688-691,共4页Journal of Northeastern University(Natural Science)

基　　金：中央高校基本科研业务费专项资金资助项目(N110403001)

摘　　要：利用溶胶凝胶法制备了不同n(Ni)/n(Ti)比的Ni O-TiO_2复合薄膜,电学测试表明薄膜具有可重复双极阻变特性,且开关比与Ni O薄膜相比有显著提升.400℃退火n(Ni)/n(Ti)为7∶1的样品阻变阈值电压低、开关比高且稳定性好,原因是Ni O-TiO_2薄膜可形成P-N结纳米结构.焦耳热分析表明薄膜荷电输运属于热激发,高阻态符合由氧空位缺陷俘获电荷所致空间电荷限制导电机制,低阻态为欧姆特性,阻变机理为电荷俘获及再释放.The NiO-TiO2 （ NTO ） nanocomposite thin films with different n （ Ni ）/n （ Ti ） ratios were fabricated through sol-gel method. The current-voltage measurements indicated that the NTO films exhibit bipolar resistance switching behavior with low threshold voltage, high on/off ratio and long retention time. The low resistance state was governed by the Ohmic mechanism, while the high resistance state can be described with the oxygen-vacancy-related space charge limited conduction. The switching mechanism is related to the charge trapping/detrapping process.

关 键 词：溶胶凝胶法 金属氧化物复合薄膜 阻变特性 氧空位 

分 类 号：TQ630.1[化学工程—精细化工]