InAs/GaAs量子点激光器增益特性  

Gain characteristics of InAs/GaAs quantum dot lasers

作　　者：魏育新[1] 陈蕊丽[1] 

机构地区：[1]中国人民公安大学刑事科学技术学院,北京100038

出　　处：《河北大学学报（自然科学版）》2016年第3期232-236,共5页Journal of Hebei University(Natural Science Edition)

基　　金：中国人民公安大学基本科研业务费资助项目(2014JKF0013)

摘　　要：由于载流子在3个维度受到量子限制,半导体量子点具有类似于原子的分立能级,并展现出许多独特的光学和电学性能.实验研制了InAs/GaAs量子点半导体激光器,分别采用傅里叶级数展开方法和Hakki-Paoli方法准确地测量和表征量子点激光器的模式增益,分析了其增益与损耗.实验结果表明HakkiPaoli方法受测量系统分辨率影响大,在增益谱峰值附近由其得到的增益明显偏低.采用傅里叶级数展开方法并由测试系统响应函数进行修正,可以获得更准确的增益谱.Due to the atom-like state densities,quantum-dot（QD）lasers have a number of unique optical and electronic properties.In this work,InAs/GaAs quantum dot semiconductor lasers are fabricated,and their mode gain spectra are measured by the Fourier series expansion method and the Hakki-Paoli method.Hakki-Paoli method is found to be influenced by the resolution of the measurement system,leading to underestimated gain.On the other hand,we found that Fourier Series Expansion method with a correction factor derived from the response function of the measurement system can be used to obtain gain spectrum with high accuracy.

关 键 词：半导体激光器 量子点 模式增益 

分 类 号：TN248.4[电子电信—物理电子学]