高压电容瞬时放电时单片机软件失效机理  

MCU Software Failure Mechanism of High Voltage Capacitor Instantaneous Discharge

作　　者：孙国先 戴黎红[2] 康兴国[2] 

机构地区：[1]机电动态控制重点实验室,陕西西安710065 [2]西安机电信息技术研究所,陕西西安710065

出　　处：《探测与控制学报》2016年第2期23-27,共5页Journal of Detection & Control

摘　　要：针对引信电子安全系统在实际工作中存在强电磁干扰,可使单片机出现"复位"、"死机"、RAM数据被改写的软件失效现象,研究了高压电容瞬时放电时电子安全系统中单片机软件的失效机理。导致单片机软件失效的主要机理是运算或逻辑错误源于RAM数据寄存器内容发生变化。复位源于程序跳飞到非程序区,瞬时故障和死机或死循环源于程序跳飞到程序区。实验表明,高压电容瞬时放电时确实会造成数据寄存器内容被修改;复位现象是程序跳飞到非程序区引起的;死循环或死机是因为程序计数器PC跳飞到程序区改写了指令的执行序列;瞬时故障是程序跳飞到程序区跳过部分指令执行。实验结果与机理分析一致。Strong electromagnetic interference will cause MCU of ESA software failure,such as ＂reset＂、＂crash＂、RAM data rewrite.An analysis of MCU software failure mechanism of high voltage capacitor instantaneous discharge was proposed.The main software failure mechanism was an arithmetic or logical error resulted from RAM data rewrite;reset result from the program jumped to the blank area,transient fault or infinite loop resulted from program jumping to program area.Experiments showed that the high voltage capacitor instantaneous discharge could indeed cause the data register modified;reset was the result of the program jump to the blank area;infinite loop or crash because of the program counter PC ricocheted to the execution of the program area changed the instruction sequence;transient fault was program ricocheted to skip part of the instruction execution.The experimental results were consistent with the mechanism analysis.

关 键 词：引信 电子安全系统 单片机 失效机理 

分 类 号：TJ43[兵器科学与技术—火炮、自动武器与弹药工程]