一种碳化硅双极结型晶体管新型自适应驱动电路  

A New Adaptive Drive for Silicon Carbide Bipolar Junction Transistors

作　　者：唐赛[1] 廖淋圆 王俊[1] 帅智康[1] 尹新[1] 肖靖[1] 邓林峰[1] 沈征[1] 刘江 金锐 王耀华 

机构地区：[1]湖南大学电气与信息工程学院,长沙410082 [2]国网智能电网研究院,北京102211

出　　处：《磁性元件与电源》2016年第5期134-139,共6页Components and Power

基　　金：国家电网公司科技项目（SGRI-WD-71-14-005）;国家高技术研究发展计划（863计划）（2014AA052601）

摘　　要：作为新型半导体材料功率器件的代表，碳化硅双极结型晶体管（SiCBJT）相较硅基晶体管有许多独特的优势，如高电流增益、优良的耐高温可靠性、制作工艺简单以及无碳化硅栅氧可靠性问题，在军用以及日常应用中有着广泛的应用前景。但其作为电流型器件，即使在较大的电流增益系数下，SiCBJT的驱动损耗仍然不可忽略。为了节省驱动功耗，一系列的驱动方式被使用。本文将几种典型的传统BJT驱动应用于SiCBJT，并对其功耗，开关速度进行比较，在此基础上对其参数进行优化，最后提出了一种SiCBJT的新型自适应驱动，通过建立从集电极电流到基极电流的的正反馈，基极电流能够等比例的跟随集电极电流，使得电流增益系数保持稳定，简化了驱动电路并提高了电路的响应速度，同时大大减少了基极稳态驱动功耗。通过斩波电路的实验结果表明，自适应驱动方式稳态功耗仅为恒定基极电流驱动方式稳态功耗的30％左右。As a typical structure of post-silicon power devices, SiC bipolar junction transistor（SiC BJT） has many unique advantages , such as high current gain, excellent resistance to high temperature, simple processing technology and excellent reliability without concern of SiC/SiO2 interface traps.. Therefore, SJT has wide prospects in military and daily application. As a type of typical current-mode devices, SiC BJT has significant drive loss even under high cttrrent gain condition. Until now, several methods have been used to reduce the drive power consumption. In this paper, we introduce and compare several drive methods from their loss and efficiency point of view of these driver. Then we optimize the parameters.Finally a new adaptive driver is proposed. In this adaptive drive, base current can follow the collector current proportionally and keep current gain stable by building positive feedback between base current and collector current. In this way, we can reduce drive loss signally and increase the response speed of the circuit while simplifying drive circttit.Expefimental results show that, the steady state power consumption of adaptive driver is only 30% of the driver with constant base cttrrent.

关 键 词：碳化硅双极结型晶体管 驱动功耗 基极电流 

分 类 号：TN86[电子电信—信息与通信工程]