电子辐照对SiC陶瓷微观结构与辐致发光性能的影响  

Effect of Electron Irradiation on Microstructure and Radioluminescence Property of SiC Ceramics

作　　者：赵爽[1] 杨自春[1] 周新贵[2] 

机构地区：[1]海军工程大学舰船高温结构复合材料研究室,武汉430033 [2]国防科技大学,新型陶瓷纤维及其复合材料国家重点实验室,长沙410073

出　　处：《硅酸盐学报》2016年第6期860-865,共6页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金面上项目(51372274);武器装备预研基金(9140A27030514JB11449)资助

摘　　要：以聚碳硅烷(PCS)为原料,通过聚合物裂解法分别在1 100和1 800℃制备出Si C陶瓷。用1.8 MeV电子源(辐照强度为5 360 Gy/s、总剂量约为20 MGy、辐照温度为200℃)对其进行辐照。对SiC陶瓷辐照前后的结构以及辐照后的辐致发光谱进行分析。结果表明:1 100和1 800℃得到的SiC陶瓷X射线衍射谱中最强峰强度分别下降了48.7%和50.5%,辐照区域晶粒变小,说明SiC陶瓷辐照后晶体结构发生了明显无定形化。1 800℃得到的Si C陶瓷辐照后局部区域出现了C元素富集。聚合物裂解法制备的Si C陶瓷中游离碳含量较高,导致其辐致发光强度低(<0.1)。SiC ceramics were frabricated via pyrolysizing polycarbosilane （PCS） at 1 100 and 1 800℃, respectively. The SiC ceramics were then irradiated using 1.8 MeV electron at an intensity of 5 360 Gy/s, a total dose of 20 MGy and an irradiation temperatue of 200℃. The microstructure of the SiC ceramics was investigated, and the radio-luminescence （RL） spectra of the SiC ceramics after irradiation were detected. The results show that the intensities of the X-ray diffraction peaks in the diffraction patterns of SiC ceramics frabricated at 1 100 and 1 800℃ are decreased by 48.7% and 50.5%, respectively. The grain size in the irradiated area is also decreased, indicating that evident amorphization of the crystal structure appears after irradiation in both SiC specimens. The enrichment of carbon occurs in some irradiated areas of SiC ceramics frabricated at 1 800℃. Moreover, a slight peak emission with an intensity of 〈0.1 is detected in the radio-luminescence spectra due to the self absorption of the free carbon in the polymer derived SiC ceramics.

关 键 词：电子辐照 碳化硅陶瓷 微观结构 辐致发光 

分 类 号：TB321[一般工业技术—材料科学与工程]