GaN/SiC异质结正向恢复行为的数值模拟  

Numerical Simulation on Forward Recovery Behavior of GaN/SiC Heterojunction

作　　者：赵少云[1] 韦文生[1] 

机构地区：[1]温州大学物理与电子信息工程学院,温州325035

出　　处：《材料导报》2016年第8期143-148,157,共7页Materials Reports

基　　金：国家自然科学基金(62174006)

摘　　要：利用Matlab编程模拟仿真了GaN/SiC异质结的正向恢复过程。讨论了GaN/SiC异质结的模型,分析了异质结的外因(外加电流变化率、温度等)及内因(N区掺杂浓度、电子迁移率等)对异质结正向峰值电压和正向恢复时间的影响,对比了GaN/6H-SiC、GaN/4H-SiC、GaN/3C-SiC三种异质结的正向恢复过程。结果表明,前述内、外因素对GaN/SiC异质结的正向恢复有明显影响,可通过调节各参数以优化GaN/SiC异质结的正向恢复过程。Matlab simulation was used to simulate the forward recovery process of GaN/SiC heterojunctioru The model of GaN/SiC heteroiunction was discussed. The effects of external factors （change rate of external current, temperature, etc. ） and internal ones （doping concentration of N region, electron mobility, etc. ） on the forward peak voltage and recovery time were analyzed. The forward recovery process of GaN/6H-SiC, GaN/4H-SiC and GaN/3C- SiC heterojunctions were compared. The simulation results show that the above factors influence obviously on the forward recovery of GaN/SiC heterojunction. Forward recovery behavior of GaN/SiC heterojunction can be optimized by selecting a suitable material.

关 键 词：GaN/SiC异质结 正向恢复 峰值电压 正向恢复时间 数值模拟 

分 类 号：TN315[电子电信—物理电子学]