硅酸盐掺杂对AgO正极材料影响的研究  

Influences of SiO_3^(2-) Doping on AgO as Cathode Material

作　　者：原勇强[1] 崔益秀[1] 冯秀丽[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,绵阳621900

出　　处：《材料导报》2016年第10期23-26,共4页Materials Reports

基　　金：中国工程物理研究院院基金(2012B0302045)

摘　　要：利用液相沉淀法制备高纯度片状结构的AgO正极材料,通过物理掺杂的方法制备不同硅酸盐含量的AgO材料,并对其进行物性表征及电化学性能测试。利用碘量法分析样品的纯度,XRD研究表明随着含量的增加,硅酸盐的图谱更加明显。热重分析掺杂后的样品热分解温度无变化,第一个分解温度仍在210℃左右。在常温下测试其电化学性能,在4C恒流放电下,掺杂硅酸盐都有一个压降过程,其中质量分数约为12%的AgO样品的电压降低到0.2V。同时,老化试验测试表明,掺杂一定量的硅酸盐可以降低AgO材料的分解速率。The present paper reports the synthesis,characterization,electrochemical properties and thermal stability of AgO cathode materials doped with different contents of silicate.The study′s results showed that highly pure AgO was synthesized by a chemical precipitation method,and the samples possessed layered-structure.X-ray diffraction（XRD）confirmed an enhanced peak intensity in AgO with higher silicate content,while TG analysis observed no variation of decomposition temperature among doped and undoped samples,as the early decomposition temperature remained about 210 ℃.Discharge voltage drops could be found in the AgO samples doped with silicate at ambient temperature and 4Cdischarge rate,among which the discharge voltage for 12wt%silicate-doped AgO as cathode drastically dropped to 0.2V.Moreover,aging test results suggested that the decomposition rate of AgO material can be mitigated through the addition of a certain amount of silicate.

关 键 词：AGO 掺杂 正极材料 

分 类 号：TM912.9[电气工程—电力电子与电力传动] O646[理学—物理化学]