Performance analysis of charge plasma based dual electrode tunnel FET  

作　　者：Sunny Anand S.Intekhab Amin R.K.Sarin 

机构地区：[1]Department of Electronics and Communication Engineering, Dr.B.R.Ambedkar National Institute of Technology Jalandhar

出　　处：《Journal of Semiconductors》2016年第5期35-42,共8页半导体学报（英文版）

摘　　要：This paper proposes the charge plasma based dual electrode doping-less tunnel FET （DEDLTFET）. The paper compares the device performance of the conventional doping-less TFET （DLTFET） and doped TFET （DGTFET）. DEDLTEFT gives the superior results with high ON state current （/ON - 0.56 mA/um）, ION/IoFv ratio - 9.12 ×1013 and an average subthreshold swing （AV-SS -- 48 mV/dec）. The variation of different device parameters such as channel length, gate oxide material, gate oxide thickness, silicon thickness, gate work function and temperature variation are done and compared with DLTFET and DGTFET. Through the extensive analysis it is found that DEDLTFET shows the better performance than the other two devices, which gives the indication for an excellent future in low power applications.This paper proposes the charge plasma based dual electrode doping-less tunnel FET （DEDLTFET）. The paper compares the device performance of the conventional doping-less TFET （DLTFET） and doped TFET （DGTFET）. DEDLTEFT gives the superior results with high ON state current （/ON - 0.56 mA/um）, ION/IoFv ratio - 9.12 ×1013 and an average subthreshold swing （AV-SS -- 48 mV/dec）. The variation of different device parameters such as channel length, gate oxide material, gate oxide thickness, silicon thickness, gate work function and temperature variation are done and compared with DLTFET and DGTFET. Through the extensive analysis it is found that DEDLTFET shows the better performance than the other two devices, which gives the indication for an excellent future in low power applications.

关 键 词：band to band tunneling （BTBT） charge plasma doping-less tunnel field effect transistor （DLTFET） average subthreshold swing drain induced barrier lowering （DIBL） 

分 类 号：TN386[电子电信—物理电子学] O53[理学—等离子体物理]