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作 者:霍如如 蔡道林 陈邦明 陈一峰 王玉婵 王月青 魏宏阳 王青 夏洋洋 高丹 宋志棠
机构地区:[1]Shanghai Institute of Micro-System and Information Technology, Shanghai 200050, China [2]Shanghai Tech University, Shanghai 200031, China
出 处:《Journal of Semiconductors》2016年第5期65-68,共4页半导体学报(英文版)
基 金:Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDA09020402);the National Key Basic Research Program of China(Nos.2013CBA01900,2010CB934300,2011CBA00607,2011CB932804);the National Integrate Circuit Research Program of China(No.2009ZX02023-003);the National Natural Science Foundation of China(No.61176122,61106001,61261160500,61376006);the Science and Technology Council of Shanghai(Nos.12nm0503701,13DZ2295700,12QA1403900,13ZR1447200,14ZR1447500)
摘 要:The endurance characteristics of phase change memory are studied. With operational cycles, the resis- tances of reset and set states gradually change to the opposite direction. What is more, the operational conditions that are needed are also discussed. The thilure and the changes are concerned with the compositional change of the phase change material. An abnormal phenomenon that the threshold voltage decreases slightly at first and then increases is observed, which is due to the coaction of interthce contact and growing active volume size changing.The endurance characteristics of phase change memory are studied. With operational cycles, the resis- tances of reset and set states gradually change to the opposite direction. What is more, the operational conditions that are needed are also discussed. The thilure and the changes are concerned with the compositional change of the phase change material. An abnormal phenomenon that the threshold voltage decreases slightly at first and then increases is observed, which is due to the coaction of interthce contact and growing active volume size changing.
关 键 词:phase change memory endurance compositional change threshold voltage
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