Researching the silicon direct wafer bonding with interfacial SiO_2 layer  

作　　者：王小青 俞育德 宁瑾 

机构地区：[1]State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2016年第5期121-124,共4页半导体学报（英文版）

基　　金：Project supported by the Key Program of the National Natural Science Foundation of China(No.61334008);the National Natural Science Foundation of China(No.61376072)

摘　　要：A silicon wafer direct bonding with a thin SiO2 layer at the interface was investigated. An atomic force microscope （AFM） was employed to characterize the surface roughness and a shearing test was carried out to evaluate the bonding strength. Experiments were performed to analyze the relations of surface roughness and bonding strength with the thickness of SiO2 which was grown by thermal oxidation and plasma enhanced chemical vapor deposition （PECVD） respectively. The bonding strength can reach up to 18 MPa for thermal oxidation and 8 MPa for PECVD after a 2-h 400℃ annealing. Results indicate that the bonding strength is negatively correlated to the thickness of SiO2 at the interface, which is important in designing the MEMS-based devices and other devices built with wafer direct bonding.A silicon wafer direct bonding with a thin SiO2 layer at the interface was investigated. An atomic force microscope （AFM） was employed to characterize the surface roughness and a shearing test was carried out to evaluate the bonding strength. Experiments were performed to analyze the relations of surface roughness and bonding strength with the thickness of SiO2 which was grown by thermal oxidation and plasma enhanced chemical vapor deposition （PECVD） respectively. The bonding strength can reach up to 18 MPa for thermal oxidation and 8 MPa for PECVD after a 2-h 400℃ annealing. Results indicate that the bonding strength is negatively correlated to the thickness of SiO2 at the interface, which is important in designing the MEMS-based devices and other devices built with wafer direct bonding.

关 键 词：wafer direct bonding surface roughness bonding strength 

分 类 号：TN304.05[电子电信—物理电子学]