适用于电路仿真的IGBT模块暂态模型研究  

Research on IGBT Module Transient Model for Circuit Simulation

作　　者：徐延明[1] 赵成勇[1] 周飞 徐莹[1] 刘启建[1] 

机构地区：[1]华北电力大学电气与电子工程学院,北京102206 [2]国网智能电网研究院,北京102200

出　　处：《电源学报》2016年第3期28-37,共10页Journal of Power Supply

基　　金：国家自然科学基金资助项目(51177042);国家电网公司科技资助项目(SGRI-DL-71-13-001)~~

摘　　要：高压IGBT与二极管构成IGBT模块已经广泛应用于柔性直流输电技术领域。然而现有仿真研究难以模拟IGBT模块中IGBT与二极管各自详细开关暂态特性及相互影响,因此提出一种适用于电路仿真的IGBT模块暂态模型及其参数通用提取方法。模型采用机理推导、电气等效、曲线拟合等方法在PSCAD、SABER等电路仿真平台实现,无需获取器件底层参数和求解复杂物理方程,不仅可以实现电路仿真中IGBT模块的各种运行状态,而且可以在纳秒级步长下模拟其电压电流尖峰、拖尾电流、米勒平台等开关暂态特性。通过与SABER中通用模型仿真结果及实验实测波形对比分析,验证了IGBT模块暂态模型和参数提取方法的正确性和通用性,为进一步将模型应用于柔性直流输电系统仿真、电磁干扰及损耗分析、控制策略等研究打下基础。The IGBT module which is composed of an insulated gate bipolar transistor（IGBT）and anti-parallel diode has been widely applied to the technical field of flexible HVDC. The existing IGBT models from literatures are rather difficult to simulate the switching transient and mutual influence of IGBT and diode. To solve this problem, an IGBT module transient model for circuit simulation is proposed and the general extraction methods of the key parameters are provided as well. The proposed model is respectively implemented on platforms including PSCAD/EMTDC, SABER, etc, using the theoretical analysis, electric equivalence, curve fitting and other means. The proposed model does not need to obtain underlying device parameters and solve the complex physical equations. It can achieve different states of IGBT module in circuit simulation and simulate the voltage and current spikes, tail current, miller platform and other characteristics. The accuracy and versatility of the IGBT module switching transient model are verified by comparing the simulation results from PSCAD with that from SABER and experimental results successively. The proposed model makes a foundation for further application research on flexible HVDC system simulation, loss analysis and control strategy optimization.

关 键 词：绝缘栅双极性晶体管(IGBT) 二极管 参数提取 暂态模型 

分 类 号：TN335[电子电信—物理电子学]