用于超高速数字集成电路的0.5um InP/InGaAs双异质结晶体管  

0.5 μm InP/InGaAs DHBT for ultra high speed digital integrated circuit

作　　者：牛斌[1] 程伟[1] 张有涛[1] 王元[1] 陆海燕[1] 常龙[1] 谢俊领 

机构地区：[1]南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016

出　　处：《红外与毫米波学报》2016年第3期263-266,共4页Journal of Infrared and Millimeter Waves

基　　金：supported by National Natural Science Foundation of China(61474101,61504125)

摘　　要：报道了用于超高速数字集成电路的0.5μm发射级线宽的InP/InGaAs DBHT器件,及其100 GHz的静态分频器,其工作频率达到国内领先.并详细分析了器件CB结电容对影响高速数字应用的影响,其中Ccb/Ic达到0.4 ps/V,揭示其静态分频器具有工作在150 GHz以上的潜力.0. 5μm InP/InGaAs DHBT with 350 /533 GHz ft /fmax and two layers of interconnecting technology were developed for ultra high speed digital integrated circuit( I_C) application. A static divide-by-2 frequency divider operating at 100 GHz was demonstrated. As the important parameters of gate delay,base-collector capacitance C_(cb) and C_(cb) /I_C were analyzed. The value of C_(cb) /I_C as low as 0. 4 ps /V was achieved,indicating that frequency divider operating above 150 GHz could be potentially realized.

关 键 词：磷化铟 双异质结晶体管 静态分频器 

分 类 号：TN3[电子电信—物理电子学]