退火对Mn-Co-Ni-O薄膜器件性能的影响  

Annealing effect on the properties of Mn-Co-Ni-O film detector

作　　者：张飞[1] 欧阳程[1] 周炜[1] 吴敬[1] 高艳卿[1] 黄志明[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2016年第3期287-293,共7页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(11204336;61274138;61275111;11304336);上海市基金(12ZR1452200);上海技术物理所创新专项(Q-ZY-86)~~

摘　　要：采用磁控溅射法制备了厚度为6.5μm的Mn_(1.95)Co_(0.77)Ni_(0.28)O_4组分的薄膜材料,把材料分别在400℃,500℃,600℃,700℃,800℃下进行后退火处理.结果表明,室温下的负电阻温度系数α295值随退火温度增加先增大后减小,而电阻率ρ_(295)则是随退火温度增加逐渐减小的;在相同频率下,500℃退火样品的归一化噪声谱密度(S_V·V_R/V^2)最小,700℃退火样品的归一化噪声谱密度最大.退火温度越高会造成越多的晶体缺陷,从而降低有效导热系数、增大时间常数τ和器件噪声.Thin films of Mn_(1.95)Co_(0.77)Ni_(0.28)O_4 with a thickness of 6. 5 μm were prepared by the magnetron sputtering method annealed at temperatures of 400℃,500℃,600℃,700℃,800℃ respectively.The negative temperature coefficient of resistivity( NTCR) of the films at room temperature α_(295) increases firstly,and then decreases with the growing annealing temperature. However,the resistivity of the films at room temperature ρ_(295) keeps decreasing with the growing annealing temperature. The sample annealed at 500℃ has the minimal normalized noise spectral density( S(V·V_R /V^2),while that annealed at 700℃ has the maximal. The annealing process produces defects in the films,which lower the thermal conductivity and augment response time τ as well as the detector noise.

关 键 词：Mn1.95 C00.77Ni0.28O4薄膜 器件性能 退火温度 探测率 响应率 

分 类 号：TN21[电子电信—物理电子学]