基于DOE策略的多层薄膜残余应力对太赫兹微桥形变的影响  

Orthogonal design of multilayer thin film residual stress impact on the THz micro bridge deformation

作　　者：郑兴[1] 刘子骥[1] 顾德恩[1] 苟君[1] 马家锋 黎威志[1] 吴志明[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《红外与毫米波学报》2016年第3期326-331,共6页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金创新研究群体科学基金(61421002);国家自然科学基金(61235006、61501092);中央高校基本科研业务费项目(ZYGX2015KYQD016)~~

摘　　要：桥面多层膜系残余应力匹配是消除太赫兹微测辐射热计微桥结构形变的重要手段.仿真建立了像元尺寸为35μm×35μm微桥单元有限元模型.基于实验设计(DOE)正交法,采用IntelliSuite软件进行应力仿真,获得支撑层、钝化层、电极层、热敏层、吸收层应力分别为+200 Mpa、+200 Mpa、+200 Mpa、0 Mpa、-400 Mpa的最佳应力组合,最小微桥单元形变(0.0385μm).通过各膜层残余应力控制,制备出基于该优化微桥单元结构的320×240太赫兹焦平面阵列,获得与仿真结果相符的极小形变微桥.Residual stress matching is critical for elimination of deformation for terahertz( THz) microbolometer with micro-bridge structure. Finite element simulation model of micro-bridge was built with a pixel size of 35 μm × 35 μm. Intellisuite was used for mechanics simulation based on orthogonal experimental design. A minimum deformation of 0. 0385 μm was obtained with an optimized stress combination when the residual stresses of support layer,passivation layer,electrode layer,sensitive layer and absorption layer were + 200 MPa,+ 200 MPa,+ 200 MPa,0 MPa and-400 MPa,respectively.320 × 240 THz focal plane array was fabricated with the optimized stress combination. A minimal deformation was achieved,which agreed well with the simulation.

关 键 词：太赫兹微测热辐射计 力学仿真 残余应力 正交实验设计 

分 类 号：O441[理学—电磁学] O451[理学—物理]