Comparative study on beryllium and magnesium as a co-doping element for ZnO：N  

作　　者：苏宇泉 陈明明 苏龙兴 祝渊 汤子康 

机构地区：[1]School of Physics and Engineering Sun Yat-sen University [2]Faculty of Science Jiangsu University [3]Department of Physics Hong Kong University of Science and Technology

出　　处：《Chinese Physics B》2016年第6期345-348,共4页中国物理B（英文版）

基　　金：Project supported by the National Key Basic Research Program of China(Grant No.2011CB302000);the National Natural Science Foundation of China(Grant Nos.51232009 and 51202299);the Fundamental Research Funds for the Central Universities,China(Grant No.11lgpy16);the Natural Science Foundation for Jiangsu Provincial Higher Education,Institutions of China(Grant No.15KJB510005);the Talent Fund of Jiangsu University,China(Grant No.15JDG042)

摘　　要：Stable nitrogen doping is an important issue in p-type ZnO research for device applications.In this paper,beryllium and magnesium are systematically compared as a dopant in ZnO to reveal their nitrogen-stabilizing ability.Secondary ion mass spectrum shows that Be and Mg can both enhance the stability of nitrogen in ZnO while Be has a better performance.Zn 2p and O 1s electron binding energies change in both MgZnO and Be ZnO thin films.Donor-acceptor luminescence is observed in the BeZnO samples.We conclude that Be is a better co-doping element than Mg for p-type ZnO：N.Stable nitrogen doping is an important issue in p-type ZnO research for device applications.In this paper,beryllium and magnesium are systematically compared as a dopant in ZnO to reveal their nitrogen-stabilizing ability.Secondary ion mass spectrum shows that Be and Mg can both enhance the stability of nitrogen in ZnO while Be has a better performance.Zn 2p and O 1s electron binding energies change in both MgZnO and Be ZnO thin films.Donor-acceptor luminescence is observed in the BeZnO samples.We conclude that Be is a better co-doping element than Mg for p-type ZnO：N.

关 键 词：Ⅲ–Ⅴ and Ⅱ–Ⅵ semiconductors defects and impurities PHOTOLUMINESCENCE properties and materials x-ray photoelectron 

分 类 号：O484[理学—固体物理]