Heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip  

作　　者：吴立枢 赵岩 沈宏昌 张有涛 陈堂胜 

机构地区：[1]Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute

出　　处：《Chinese Physics B》2016年第6期494-499,共6页中国物理B（英文版）

摘　　要：In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors（p HEMTs） and Si complementary metal–oxide semiconductor（CMOS） on the same Silicon substrate.Ga As p HEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique,and the best alignment accuracy of 5 μm is obtained.As a circuit example,a wide band Ga As digital controlled switch is fabricated,which features the technologies of a digital control circuit in Si CMOS and a switch circuit in Ga As p HEMT,15% smaller than the area of normal Ga As and Si CMOS circuits.In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors（p HEMTs） and Si complementary metal–oxide semiconductor（CMOS） on the same Silicon substrate.Ga As p HEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique,and the best alignment accuracy of 5 μm is obtained.As a circuit example,a wide band Ga As digital controlled switch is fabricated,which features the technologies of a digital control circuit in Si CMOS and a switch circuit in Ga As p HEMT,15% smaller than the area of normal Ga As and Si CMOS circuits.

关 键 词：Si CMOS GaAs pHEMT heterogeneous integration BENZOCYCLOBUTENE 

分 类 号：TN432[电子电信—微电子学与固体电子学]