Perpendicularly oriented barium ferrite thin films with low microwave loss,prepared by pulsed laser deposition  

作　　者：陈大明 李元勋 韩莉坤 龙超 张怀武 

机构地区：[1]College of Materials and Chemical Engineering, Hainan University, Haikou 570228, China [2]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

出　　处：《Chinese Physics B》2016年第6期581-584,共4页中国物理B（英文版）

基　　金：Project supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices(Grant No.KFJJ201506);the Scientific Research Starting Foundation of Hainan University(Grant No.kyqd1539);the Natural Science Foundation of Hainan Province(Grant No.20165187)

摘　　要：Barium ferrite（Ba M） thin films are deposited on platinum coated silicon wafers by pulsed laser deposition（PLD）.The effects of deposition substrate temperature on the microstructure,magnetic and microwave properties of Ba M thin films are investigated in detail.It is found that microstructure,magnetic and microwave properties of Ba M thin film are very sensitive to deposition substrate temperature,and excellent Ba M thin film is obtained when deposition temperature is 910℃ and oxygen pressure is 300 m Torr（1 Torr = 1.3332×102Pa）.X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology,and the crystallographic alignment degree can be calculated to be 0.94.Hysteresis loops reveal that the squareness ratio（Mr/Ms） is as high as 0.93,the saturated magnetization is 4004 Gs（1 Gs = 104T）,and the anisotropy field is 16.5 kOe（1 Oe = 79.5775 A·m-1）.Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe,and the ferromagnetic resonance linewith is108 Oe at 50 GHz,which means that this thin film has low microwave loss.These properties make the Ba M thin films have potential applications in microwave devices.Barium ferrite（Ba M） thin films are deposited on platinum coated silicon wafers by pulsed laser deposition（PLD）.The effects of deposition substrate temperature on the microstructure,magnetic and microwave properties of Ba M thin films are investigated in detail.It is found that microstructure,magnetic and microwave properties of Ba M thin film are very sensitive to deposition substrate temperature,and excellent Ba M thin film is obtained when deposition temperature is 910℃ and oxygen pressure is 300 m Torr（1 Torr = 1.3332×102Pa）.X-ray diffraction patterns and atomic force microscopy images show that the best thin film has perpendicular orientation and hexagonal morphology,and the crystallographic alignment degree can be calculated to be 0.94.Hysteresis loops reveal that the squareness ratio（Mr/Ms） is as high as 0.93,the saturated magnetization is 4004 Gs（1 Gs = 104T）,and the anisotropy field is 16.5 kOe（1 Oe = 79.5775 A·m-1）.Ferromagnetic resonance measurements reveal that the gyromagnetic ratio is 2.8 GHz/kOe,and the ferromagnetic resonance linewith is108 Oe at 50 GHz,which means that this thin film has low microwave loss.These properties make the Ba M thin films have potential applications in microwave devices.

关 键 词：Barium ferrite thin films magnetic properties 

分 类 号：TM277[一般工业技术—材料科学与工程]