Fabrication and characteristics of silicon-rich oxide thin films with controllable compositions  

作　　者：张诗雨 潘泉均 方旭 毛克宁 叶辉 

机构地区：[1]State Key Laboratory of Modern Optical Instrumentation,College of Optical Science and Engineering,Zhejiang University

出　　处：《Chinese Optics Letters》2016年第5期73-77,共5页中国光学快报（英文版）

基　　金：supported by the National Basic Research Program of China(No.2013CB632104);the National Natural Science Foundation of China(No.61575176);the Natural Science Foundation of the Zhejiang Province of China(No.LZ12F04002);the Research Foundation of the State Key Laboratory of Modern Optical Instrumentation(No.moi20150105)

摘　　要：Silicon-rich oxide films with controllable optical constants and properties are deposited by the reactive magnet- ton sputtering method on a Si target. The O/Si atomic ratio x of SiOx is tuned from 0.12 to 1.84 by adjusting the oxygen flow rate, which is found to be a more effective way to obtain SiOx films compared with changing the oxygen content [O2/（Ar ＋ O2） ratio]. The optical properties of SiOx films can be tuned from semiconductor to dielectric as a function of ratio x. The structures and components are also investigated by an x ray photoelectron spectroscopy analysis of the Si 2p core levels, the results of which exhibit that the structures of SiOx can be thoroughly described by the random bonding model.Silicon-rich oxide films with controllable optical constants and properties are deposited by the reactive magnet- ton sputtering method on a Si target. The O/Si atomic ratio x of SiOx is tuned from 0.12 to 1.84 by adjusting the oxygen flow rate, which is found to be a more effective way to obtain SiOx films compared with changing the oxygen content [O2/（Ar ＋ O2） ratio]. The optical properties of SiOx films can be tuned from semiconductor to dielectric as a function of ratio x. The structures and components are also investigated by an x ray photoelectron spectroscopy analysis of the Si 2p core levels, the results of which exhibit that the structures of SiOx can be thoroughly described by the random bonding model.

关 键 词：Optical films Optical properties Oxide films Semiconducting silicon Silicon oxides Thin films 

分 类 号：TB383.2[一般工业技术—材料科学与工程]