基于遗传算法的宽带低噪声放大器设计  

Design of a Wideband Low Noise Amplifier Based on Genetic Algorithm

作　　者：吴会丛[1] 李斌[2] 

机构地区：[1]河北科技大学信息科学与工程学院,石家庄050018 [2]中国电子科技集团公司第五十四研究所,石家庄050081

出　　处：《半导体技术》2016年第6期411-415,共5页Semiconductor Technology

基　　金：国家重点实验室基金资助项目(9140C8704-04150C87379);河北省自然科学基金资助项目(F2014-208113);教育部留学回国人员科研启动基金资助项目(20131792)

摘　　要：设计并实现了一款宽带低噪声放大器,采用单级负反馈拓扑结构以提高增益平坦度和稳定性。为进一步简化应用,电路采用电阻自偏压技术实现单电源供电。此外,为优化增益及噪声系数,从低噪声放大器设计理论出发,利用遗传算法对无源元件取值进行了优化。该放大器采用0.25μm PHEMT GaAs工艺实现,芯片面积为1 mm×1.2 mm。测试结果表明,采用5 V单电源电压供电,总工作电流为30 m A,在30-3 000 MHz频率范围内,该放大器增益大于13 d B,噪声系数小于2.1 d B,输入反射系数小于-8.5 d B,输出反射系数小于-10 d B,1 d B压缩点输出功率大于7 d Bm。A wideband low noise amplifier was designed and implemented, the single stage negative feedback structure was adopted in the circuit to improve the gain flatness and stability of the low noise amplifier. To simplify the application, a self-biased technique was used to achieve a single power supply. In addition, to optimize power gain and noise factor, the values of the passive component in the circuit were optimized with the genetic algorithm according to the design methodology of the low noise amplifier. Fabricated in a 0.25 μm PHEMT GaAs process, the chip occupies an area of 1 mm×1.2 mm. The test results show that with a single 5 V supply voltage, the total current consumption is 30 mA. The LNA achieve a gain of larger than 13 dB and the noise factor of smaller than 2.1 dB in the frequency range from 30 MHz to 3 000 MHz. The output power at 1 dB compression point is more than 7 dBm, while the input reflection coefficient and output reflection coefficient are smaller than -8.5 dB and -10 dB, respectively.

关 键 词：遗传算法 赝配高电子迁移率晶体管(PHEMT) 宽带 砷化镓 低噪声放大器(LNA) 

分 类 号：TN722.3[电子电信—电路与系统]