化学腐蚀法制备荧光多孔硅及对Ag^+的检测  

Preparation of Fluorescent Porous Silicon by Chemical Etching Method and Its Application in Ag^+ Detection

作　　者：熊小莉[1] 薛康[1] 尤超[1] 纪煜垚 肖丹[2] 

机构地区：[1]四川师范大学化学学院,四川成都610068 [2]四川大学化学学院,四川成都610065

出　　处：《发光学报》2016年第6期662-668,共7页Chinese Journal of Luminescence

基　　金：国家自然科学基金(21275104);四川省教育厅重点项目基金(14ZA0027);四川师范大学大精设备开放基金(2015)资助项目

摘　　要：采用简便的化学腐蚀法在45℃下制备了橘红色荧光多孔硅(PS),通过扫描电镜(SEM)、红外光谱(FT-IR)和比表面积(BET)对PS的结构进行了表征。研究发现,Ag^+能在PS上发生氧化沉积而猝灭荧光。基于此,建立了一种快速、灵敏检测Ag^+的新方法。在优化实验条件下,Ag^+浓度与PS的荧光强度在4.5×10^(-8)~6.6×10^(-7)mol/L范围内呈良好的线性关系,检测限为2.2×10^(-8)mol/L,线性相关系数为0.991 4。该方法用于水样中Ag~的检测,结果满意。A facile preparation of orange fluorescent porous silicon（ PS） was reported using a simple chemical etching method at 45 ℃. The prepared PS samples were characterized by scanning electron microscope（ SEM）,Fourier translation infrared spectrum（ FT-IR） and specific surface area（ BET）.The results show that PS samples emit strong orange fluorescence possessing excellent photostability.Moreover,the fluorescence of PS can be effectively quenched by Ag~＋ at room temperature. The fluorescence of PS shows a good linear relationship with the concentration of Ag~＋ in the range of 4. 5 ×10^（-8）- 6. 6 × 10^（-7）mol / L,the detection limit is 2. 2 × 10^（-8）-mol / L,and the correlation coefficient is0. 991 4. The mechanism of Ag~＋ -sensing in this method was further explained. Furthermore,the fluorescent Ag~＋ sensor was applied to Ag~＋ detection in environmental water samples,and satisfactory results were obtained.

关 键 词：化学腐蚀法 多孔硅 荧光 Ag+ 

分 类 号：O482.31[理学—固体物理]