Fast growth of graphene on SiO2/Si substrates by atmospheric pressure chemical vapor deposition with floating metal catalysts  

作　　者：Na Liu Jia Zhang Yunfeng Qiu Jie Yang PingAn Hu 

机构地区：[1]School of Chemical Engineering and Technology,Harbin Institute of Technology,Harbin 150001,China [2]Key Laboratory of Micro-systems and Micro-structures Manufacturing,Ministry of Education,Harbin Institute of Technology,Harbin 150080,China

出　　处：《Science China Chemistry》2016年第6期707-712,共6页中国科学（化学英文版）

基　　金：supported by the National Natural Science Foundation of China (61390502, 51502059, 61172001, 21373068);the National Basic Research Program of China (2013CB632900);the Foundational Research Funds for the Central Universities (HIT. NSRIF.201641);Self-Planned Task (SKLRS201509B) of State Key Laboratory of Robotics and System (HIT);China Postdoctoral Science Foundation Grant (2015M570285);Heilongjiang Provincial Postdoctoral Science Foundation Grant (LBH-Z15053)

摘　　要：Graphene on dielectric substrates is essential for its electronic applications. Graphene is typically synthesized on the surface of metal and then transferred to an appropriate substrate for fabricating device applications. This post growth transfer process is detrimental to the quality and performance of the as-grown graphene. Therefore, direct growth of graphene films on dielectric substrates without any transfer process is highly desirable. However, fast growth of graphene on dielectric substrates remains challenging. Here, we demonstrate a transfer-free chemical vapor deposition (CVD) method to directly grow graphene films on dielectric substrates at fast growth rate using Cu as floating catalyst. A large area (centimeter level) graphene can be grown within 15 min using this CVD method, which is increased by 500 times compared to other direct CVD growth on dielectric substrate in the literatures. This research presents a significant progress in transfer-free growth of graphene and graphene device applications.Graphene on dielectric substrates is essential for its electronic applications. Graphene is typically synthesized on the surface of metal and then transferred to an appropriate substrate for fabricating device applications. This post growth transfer process is detrimental to the quality and performance of the as-grown graphene. Therefore, direct growth of graphene films on dielectric substrates without any transfer process is highly desirable. However, fast growth of graphene on dielectric substrates remains challenging. Here, we demonstrate a transfer-free chemical vapor deposition （CVD） method to directly grow graphene films on dielectric substrates at fast growth rate using Cu as floating catalyst. A large area （centimeter level） graphene can be grown within 15 min using this CVD method, which is increased by 500 times compared to other direct CVD growth on dielectric substrate in the literatures. This research presents a significant progress in transfer-free growth of graphene and graphene device applications.

关 键 词：GRAPHENE fast growth dielectric substrates 

分 类 号：TQ127.11[化学工程—无机化工] O613.71[理学—无机化学]