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机构地区:[1]邵阳学院机械与能源工程系,湖南邵阳422000 [2]珠海佳一电子技术有限公司,广东珠海519000
出 处:《材料科学与工程学报》2016年第3期500-503,481,共5页Journal of Materials Science and Engineering
基 金:湖南省邵阳学院研究生创新资助项目(CX2014SY017)
摘 要:在几种形状不同的柔性电路板上磁控溅射Bi_2Te_3薄膜,温差测试之后进行结构的优化设计。在给予一定温差条件下,测量优化设计后的柔性热电薄膜在退火前后的输出电压和电阻率,并提出了改进措施。研究表明:优化后的柔性热电薄膜相较之前有很大的改善;柔性热电薄膜输出的电压与提供的温差近似呈线性关系;在温差为200K时,输出电压为310mV,电阻率为0.792mΩ·cm;200℃/h真空退火后,输出电压增大到368mV,电阻率也同时增大,达到0.869mΩ·cm。Bi_2Te_3 thin films were fabricated on flexible circuit boards of several different shapes by magnetron sputtering,then followed was the temperature difference test to optimize the structure design.Giving a certain temperature difference conditions,the output voltage and the resistivity of thermoelectric thin film after optimized design were measured before and after annealing,and improvement measures were proposed accordingly.Studies have shown that:The performance of the flexible thermoelectric film after optimization has been greatly improved comparing to the previous;The output voltage and temperature difference of the flexible thermoelectric thin film are almost linearly related.At a temperature difference of200 K,the output voltage is 310 mV,the resistivity is 0.792mΩ·cm;after 200℃/h vacuum annealing,the output voltage increases to 368 mV,the resistivity is also increased up to 0.869mΩ·cm.
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