AlN-based surface acoustic wave resonators on platinum bottom electrodes for high-temperature sensing applications  

作　　者：Chuan Li Xing-Zhao Liu Bin Peng Lin Shu Yan-Rong Li 

机构地区：[1]School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China [2]State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China

出　　处：《Rare Metals》2016年第5期408-411,共4页稀有金属（英文版）

基　　金：financially supported by the National Nature Science Foundation of China (No. 61223002);Sichuan Youth Science and Technology Innovation Research Team Funding (No. 2011JTD0006)

摘　　要：Surface acoustic wave（SAW） resonators with Pt/AlN/Si and Pt/AlN/Pt/Si configurations were fabricated by lift-off photolithography techniques. High-temperature performances of both configurations were investigated for temperature sensor applications. AlN films grown on Ptcoated Si substrates exhibit a lower（002） preferred orientation than those grown on Si substrates. The center frequencies of Pt/AlN/Si and Pt/AlN/Pt/Si configurations at room temperature are 424.1 and 456.4 MHz, respectively.The SAW was limited by Pt bottom electrodes to propagate in AlN layer. The temperature coefficient of frequency（TCF） values of Pt/AlN/Si and Pt/AlN/Pt/Si configurations are-51.6 × 10^-6 and-69.2 × 10^-6℃^-1, respectively.Compared with that of Pt/AlN/Si configuration, the TCF value of Pt/AlN/Pt/Si configuration decreases by 34.1 %.AlN resonator with the Pt floating bottom electrodes provides a large, quasi-constant temperature sensitivity which is suitable for temperature sensor applications.Surface acoustic wave（SAW） resonators with Pt/AlN/Si and Pt/AlN/Pt/Si configurations were fabricated by lift-off photolithography techniques. High-temperature performances of both configurations were investigated for temperature sensor applications. AlN films grown on Ptcoated Si substrates exhibit a lower（002） preferred orientation than those grown on Si substrates. The center frequencies of Pt/AlN/Si and Pt/AlN/Pt/Si configurations at room temperature are 424.1 and 456.4 MHz, respectively.The SAW was limited by Pt bottom electrodes to propagate in AlN layer. The temperature coefficient of frequency（TCF） values of Pt/AlN/Si and Pt/AlN/Pt/Si configurations are-51.6 × 10^-6 and-69.2 × 10^-6℃^-1, respectively.Compared with that of Pt/AlN/Si configuration, the TCF value of Pt/AlN/Pt/Si configuration decreases by 34.1 %.AlN resonator with the Pt floating bottom electrodes provides a large, quasi-constant temperature sensitivity which is suitable for temperature sensor applications.

关 键 词：AlN film High temperature Platinum Temperature coefficient of frequency Surface acoustic wave 

分 类 号：TP212.11[自动化与计算机技术—检测技术与自动化装置] TB383.2[自动化与计算机技术—控制科学与工程]