Ce:GAGG闪烁晶体生长与性能研究  

Study on the Growth and Scintillation Properties of Ce:GAGG Crystal

作　　者：冯大建[1] 丁雨憧[1] 刘军[1] 李和新[1] 付昌禄[1] 胡少勤[1] 

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060

出　　处：《压电与声光》2016年第3期430-432,共3页Piezoelectrics & Acoustooptics

基　　金：中国电子科技集团公司第二十六研究所所控基金资助项目(26-1508)

摘　　要：采用中频感应提拉法生长出φ50 mm×90 mm的高质量Ce:GAGG晶体,并对晶体进行X线衍射(XRD)测试,计算了晶胞参数,测试了晶体室温下的透过率、X线激发发射谱(XEL)、能谱和衰减时间特性。实验结果表明,Ce:GAGG晶体的发光中心波长为540nm,光输出为54 000光子/MeV,能量分辨率为7.2%@662keV,衰减时间为94ns。Ce：GAGG single crystal in size of50mm×90mm was grown by Cz method with radio frequency heating,and the grown crystal was measured by XRD.The cell parameters of Ce：GAGG single crystal were calculated based on the data of XRD.The transparency、XEL、light yield and decay time also were measured at room temperature.It can be found that the emission light of Ce：GAGG single crystal was centered at 540 nm,the light yield is about 54 000photons/MeV,the energy resolution is about 7.2% @ 662 keV gama ray exciting,and the decay time is about 94 ns.

关 键 词：闪烁晶体 石榴石 Ce:GAGG 提拉法 光输出 

分 类 号：TN384[电子电信—物理电子学]