X射线管足跟效应的蒙特卡罗模拟与分析  

Monte Carlo simulation and analysis of X-ray tube's heel effect

作　　者：项安[1] 梁鲁[1] 陈瑞焘[1] 

机构地区：[1]同济大学电气工程系,上海201804

出　　处：《核技术》2016年第6期35-39,共5页Nuclear Techniques

摘　　要：X射线管的足跟效应是影响其性能的重要因素。为研究足跟效应对X射线能谱分布的影响,利用MCNP5软件构建了X射线管仿真模型,并设置了不同空间位置分布的探测器组,通过改变靶角、管电压和靶材料等参数研究X射线管的性能。仿真得到了靶角对X射线能谱的影响,以及在不同空间方位上X射线强度的分布,最后综合仿真结果得到了靶角、管电压以及靶材料对足跟效应的影响规律。仿真的方法和结果对X射线管的设计和使用提供了一定的理论指导。Background Heel effect of X-ray tube is an important factor which would affect its performance,especially for reflective X-ray tube. Purpose： The study aims to research the impact of heel effect on X-ray spectral.Methods： MCNP5 is adopted to create simulation model of X-ray tube and set up detector groups following differentspatial position distribution. Then the performance of X-ray tube is analyzed by changing the parameters includingtarget angle, tube voltage and target material. Results： Simulation results show the impact of target angle upon X-rayspectral and X-ray intensity distribution in different spatial positions. In the final stage the impacts of target angle,tube voltage and target material on heel effect are shown. Conclusion： Methods and results of this simulation providecertain theoretical guidance for the design and use of X-ray tube.

关 键 词：阳极足跟效应 X射线球管 能谱分布 蒙特卡罗模拟 

分 类 号：TL99[核科学技术—核技术及应用]