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作 者:李凯丽[1] 安俊明[1] 张家顺[1] 王玥[1] 王亮亮[1] 吴远大[1] 李建光[1] 尹小杰[1] 王红杰[1]
机构地区:[1]中国科学院半导体研究所集成光电子学国家重点联合实验室,北京100083
出 处:《光子学报》2016年第5期55-61,共7页Acta Photonica Sinica
基 金:国家自然科学基金面上项目(No.61274047);国家自然科学基金重点项目(No.61435013);国家自然科学青年基金(Nos.61307034;61205044)资助
摘 要:设计了一种基于绝缘上层硅的硅-有机物材料混合马赫-曾德干涉型高速电光调制器.利用光束传播法对顶层硅为220nm的绝缘上层硅基片上的3dB分束器/合束器的结构参数进行模拟,优化后附加损耗仅为0.106dB.为提高模式转换效率,在条形波导和slot波导之间设计了模式转换器,光耦合效率高达98.8%,实现了光模式高效转化.利用时域有限差分法模拟了slot波导平板区掺杂浓度对波导内光学损耗的影响,在几乎不产生光学损耗的情况下,得到平板区轻掺杂浓度为71017/cm3,调制器设计总损耗为0.493dB.利用薄膜模式匹配法对slot波导结构进行仿真分析,考虑slot区等效电容及平板区等效电阻对带宽的影响,优化后得到slot波导结构的限制因子为0.199.采用slot波导与强非线性有机材料LXM1结合的绝缘上层硅平台实现了强普克尔效应,得到电光调制器半波电压长度积为1.544V·mm,电学响应3dB带宽为137GHz.A push-pull high-speed silicon-organic hybird MachZahnder interference electro-opticmodulator was designed based on silicon on insulator. By using beam propagation method, the structureof 3 dB beam splitter/beam combiner on the silicon on insulator (top silicon thickness is 220 nm) has beensimulated optimally whose insertion loss is 0. 106 dB. Mode converter was designed between stripewaveguide and slot waveguide to realize an efficient transformation of optical transmission mode, and thecoupling efficiency is as high as 98.8%. Also, the influence of doping concentration of slot waveguideslab area on optical loss of slot waveguide was analyzed by using finite-difference time domain methodwhen the doping concentration is 7 × 10^17/cm3 , the optical loss is nearly zero. The total loss of themodulator is 0. 493 dB. Considering the effect of slot waveguide equivalent capacitance and slab areaequivalent resistance on the bandwidths, the waveguide structure was simulated by film mode matchingsolver and the optical field confinement factor can be optimized to 0. 199. The ultrafast pockels effect wasexploited by using the silicon-organic hybird platform, which combines highly nonlinear organic materialswith slot waveguides, and realizes a voltage-length of 1. 544 V - mm and a bandwidth of 137 GHz.
关 键 词:硅-有机物材料混合 槽式波导 电光调制器 马赫曾德干涉 模式转换器
分 类 号:TN761.3[电子电信—电路与系统]
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